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Integrated gate-commutated thyristors (IGCT)

Integrated gate-commutated thyristors (IGCT)

All ABB IGCTs (Integrated Gate-Commutated Thyristors) are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals. The IGCT's turn-on/off control unit is an integral element of the component. It only requires an external power supply and its control functions are conveniently accessed through optical fiber connections. The device's control power consumption typically ranges from 10 - 100 W.


IGCT 非对称性和反向导通.jpg

Asymmetric IGCT devices are single devices optimized for snubberless turn-off operation. The associated recovery diodes can be chosen from our fast recovery diodes product range.
Reverse conducting IGCTs are monolithical integrated freewheeling diodes. They are optimized for snubberless turn-off conditions

Asymmetric IGCTS

Part numberVDRM (V)VDC (V)ITGQM (A)ITAVM (A)Package* (mm)Plecs model  
5SHY 35L4520450028004000170085/26 XML
5SHY 35L4521450028004000170085/26 XML
5SHY 35L4522450028004000210085/26 XML
5SHY 40L4511450028003600143085/26 XML
5SHY 55L4500450028005000187085/26 XML
5SHY 50L5500550033003600129085/26 XML
5SHY 42L6500650040003800129085/26 XML

*Note: Pole-piece diameter / Housing height 


 Reverse conducting  IGCTS

 Part number VDRM (V)VDC (V)  ITGQM (A)TAVM / IFAVM(A) Package* (mm)  Plecs model
5SHX 26L452045002800 2200101085/26 XML
Diode part


5SHX 19L602055003300 1800840 85/26 XML
Diode part


 *Note: Pole-piece diameter / Housing height

IGCT 反向阻断.jpg

This symmetrical IGCT is optimized for the current source inverter technology in medium voltage drive and breaker applications. 

Part numberVDRM (V)VT (V)ITGQM (A)ITAVM / IFAVM (A)Package* (mm)
5SHZ 11H650065005.87110049062.8/13.8

*Note: Pole-piece diameter / Housing height